2024

03-18

Announcement

Baoding Plant Phase I

Hebei Synlight Semiconductor Co., Ltd. was established in 2012 with a total investment of 2 billion yuan. Specializing in the research, development, production, and sales of SiC substrate, Synlight is a national high-tech company and a certified "Little Giant" company by Ministry of Industry and Information Technology.

2024

03-13

Announcement

2023

In October 2023, the new material will be put into production and completed

2024

03-13

Announcement

2022

In August 2022, it passed certification of IATF;In August of the same year, the 8-inch was successfully developed

2024

03-13

Announcement

Baoding Plant Phase II

Hebei Synlight New Materials Co., Ltd., established in August 2022 and situated in Baoding High-tech Development Zone, is a wholly-owned subsidiary of Hebei Synlight Semiconductor Co., Ltd. The company specializes in the research, development, and production of third-generation semiconductor material silicon carbide polycrystalline powder.

2024

03-13

Announcement

Laiyuan Plant

Hebei Synlight Technology Development Co., Ltd., founded in 2020, is located in Laiyuan Economic Development Zone, Baoding. The company specializes in the development and production of the third generation semiconductor material silicon carbide single crystal material.

2024

03-13

Announcement

Happy News ‖ Synlight Shares completed the F round of financing, led by Shenzhen Venture Capital New Materials Fund and Beijing-Tianjin-Hebei Industrial Investment Fund, and jointly invested by High-tech Venture Capital and Hebei Industrial Investment

Recently, the third generation semiconductor material silicon carbide single crystal substrate manufacturing enterprise -- Hebei Synlight Semiconductor Co., LTD. (referred to as "Synlight Shares") announced the completion of the F round of financing. The scale of this round of financing is 1.5 billion yuan, led by Deep Venture Capital Manufacturing Transformation and Upgrading New Materials Fund (referred to as "Deep Venture Capital New Materials Fund"), Beijing-Tianjin-Hebei Coordinated Development Industry Investment Fund (referred to as "Beijing-Tianjin-Hebei Industrial Investment Fund"), Joint investment by Baoding High-tech Zone Venture Capital Co., LTD. (hereinafter referred to as "High-tech Venture Capital") and Hebei Industrial Investment War New Industry Development Center (hereinafter referred to as "Hebei Industrial Investment").

2024

03-13

Announcement

【 Activities 】‖ The first Photo Contest and 9th Anniversary of Hebei Synlight came to a successful conclusion

Time flies, Synlight has been more than 9 years since its establishment in 2012. Looking back on the past, those ordinary and moving bits emerge in front of each of us, bringing together a history of Synlight's development. In order to record the growth of Synlight footprint, show the majority of staff style, create a harmonious enterprise working atmosphere, enhance the feelings between departments, on the occasion of the ninth anniversary, the first photo contest was held in Hebei Synlight.

2024

03-14

Announcement

2021

August 2021, ISO Passed:140001, ISO:45001;The Laiyuan City project went into first phase production in September 2021;In December 2021, Great Wall Motor, a new energy vehicle manufacturer, took shares and investment in the company

2024

03-13

Announcement

2020

In March 2020, the company established a subsidiary in Laiyuan City and started the production expansion project with an annual output of 100,000 pieces of silicon carbide single crystal substrate

2024

03-13

Announcement

2019

In January 2019, the beltline of silicon carbide single crystal substrate was completed;In March of the same year, the 6-inch n-type substrate was completed

2024

03-13

Announcement

2017

In November 2017, cooperated with Chinese Academy of Sciences, Tsinghua University, Peking University and Hebei University to build the "third-generation semiconductor material Testing platform".

2024

03-13

Announcement

2016

In 2016, the first 4-inch conductive and high-purity semi-insulating silicon carbide single crystal was successfully developed
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