ABOUT US

Baoding Plant Phase I

Laiyuan Plant

Baoding Plant Phase II

Laiyuan Plant

Hebei Synlight Technology Development Co., Ltd., founded in 2020, is located in Laiyuan Economic Development Zone, Baoding. The company specializes in the development and production of the third generation semiconductor material silicon carbide single crystal material.
With the significant advantages of R&D and production, Synlight Technology constructed crystal growth workshop, substrate processing center, seed crystal center and other production workshops, and other supporting buildings like office and R&D center. Using the international advanced silicon carbide single crystal substrate preparation technology, the construction of professional silicon carbide growth line is finished with more than 200 crystal growth furnace, and multi-line cutting machine, grinding machine and other crystal processing equipment more than 200. We can achieve an annual 50,000 pieces of high quality, large size silicon carbide wafer .
Synlight Technology, focusing on technology development, closely cooperating with the Semiconductor Institute of the Chinese Academy of Sciences, established the "Third Generation Semiconductor Materials Joint R&D Center" in 2021. 
Based on technology and market demand, Synlight Technology developed high-quality SiC single crystal mass production technology, built a technical team composed of cutting-edge talents, trained outstanding talents for the company.
The "Academician Expert Service Center" was settled in the Academician Expert Building of Synlight Technology in September 2021. The service center provides a high-level communication platform for the government, enterprises, experts and scholars to discuss issues related to third-generation semiconductor technology, application, investment and development, and gathers new momentum for the development of third-generation semiconductors in Baoding.
Since establishment, Synlight Technology has been deeply engaged in the research and development of large-size and high-quality silicon carbide materials, constantly overcome the technical problems of 6-inch silicon carbide diameter expansion and defect density control, and realized the leap from 4-inch to 6-inch silicon carbide single crystal preparation, and the product quality has reached the international advanced level.

 

50000 +

Annual output of high-quality, large-size silicon carbide wafers

2020 Year

The company was established in

200 Taiwan

equipment single crystal growth furnace

Company Glimpse